Micron and Intel make flash memory breakthrough, faster NAND memory on the horizon; phase-change memory possible NAND successor
...breakthrough in NAND flash memory technology. The company has created an 8GB SLC (single-level cell) high-speed NAND memory chip that is capable of 200Mbps read and 100Mbps write speeds. Compared to the current 40Mbps read and 20Mbps write speeds, the new technology represents a significant improvement
The new high-speed technology complies...
